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Universal features in the photoemission spectroscopy of high temperature superconductors

机译:高温光电子能谱的通用特征   超导体

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摘要

The energy gap for electronic excitations is one of the most importantcharacteristics of the superconducting state, as it directly refects thepairing of electrons. In the copper-oxide high temperature superconductors(HTSCs), a strongly anisotropic energy gap, which vanishes along high symmetrydirections, is a clear manifestation of the d-wave symmetry of the pairing.There is, however, a dramatic change in the form of the gap anisotropy withreduced carrier concentration (underdoping). Although the vanishing of the gapalong the diagonal to the square Cu-O bond directions is robust, the dopingdependence of the large gap along the Cu-O directions suggests that its originmight be different from pairing. It is thus tempting to associate the large gapwith a second order parameter distinct from superconductivity. We useangle-resolved photoemission spectroscopy (ARPES) to show that the two-gapbehavior, and the destruction of well defined electronic excitations, are notuniversal features of HTSCs, and depend sensitively on how the underdopedmaterials are prepared. Depending on cation substitution, underdoped sampleseither show two-gap behavior or not. In contrast, many other characteristics ofHTSCs, such as the domelike dependence of Tc on doping, long-lived excitationsalong the diagonals to the Cu-O bonds, energy gap at the antinode (crossing ofthe underlying Fermi surface and the (pi, 0)-(pi, pi) line) decreasingmonotonically with doping, while persisting above Tc (the pseudogap), arepresent in all samples, irrespective of whether they exhibit two-gap behavioror not. Our results imply that universal aspects of high Tc superconductivityare relatively insensitive to differences in the electronic states along theCu-O bond directions.
机译:电子激发的能隙是超导状态的最重要特征之一,因为它直接影响电子的配对。在氧化铜高温超导体(HTSC)中,沿高对称性方向消失的强各向异性能隙清楚地表明了配对的d波对称性,然而,间隙各向异性降低了载流子浓度(掺杂不足)。尽管沿对角线到方形Cu-O键方向的缝隙消失很强,但沿Cu-O方向的大缝隙的掺杂依赖性表明其起源可能与配对不同。因此,试图将大间隙与不同于超导性的二阶参数相关联。我们使用角度分辨光发射光谱法(ARPES)来表明,双能隙行为以及良好定义的电子激发的破坏不是HTSC的普遍特征,并且敏感地取决于如何制备掺杂不足的材料。取决于阳离子取代,掺杂不足的样品是否显示出两间隙行为。相比之下,HTSC的许多其他特征,例如Tc对掺杂的圆顶状依赖性,长寿命的激发沿与Cu-O键的对角线延伸,波腹处的能隙(下伏费米表面与(pi,0)- (pi,pi)线)随掺杂单调递减,同时在Tc(伪间隙)之上持续存在,无论它们是否表现出两间隙行为,都存在于所有样品中。我们的结果表明,高Tc超导性的普遍方面对沿Cu-O键方向的电子态差异相对不敏感。

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